Technische Details IXFN27N80 IXYS
Description: MOSFET N-CH 800V 27A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 13.5A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9740 pF @ 25 V.
Weitere Produktangebote IXFN27N80
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| IXFN27N80 | Hersteller : IXYS | 07+; |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
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| IXFN27N80 | Hersteller : IXYS | MODULE |
auf Bestellung 122 Stücke: Lieferzeit 21-28 Tag (e) |
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IXFN27N80 Produktcode: 91884
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IXFN27N80 | Hersteller : IXYS |
Description: MOSFET N-CH 800V 27A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 13.5A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9740 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFN27N80 | Hersteller : IXYS |
 MOSFET Modules 800V 27A |
Produkt ist nicht verfügbar |