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IXFN27N80Q

IXFN27N80Q IXYS

littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn27n80q_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 800V 27A SOT-227B
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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Technische Details IXFN27N80Q IXYS

Description: MOSFET N-CH 800V 27A SOT-227B, Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 4.5V @ 4mA, Power Dissipation (Max): 520W (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.

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IXFN27N80Q IXFN27N80Q Hersteller : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXFN27N80Q_Datasheet.PDF MOSFET Modules 27 Amps 800V 0.32 Rds
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