Technische Details IXFN38N100Q2 IXYS
Description: MOSFET N-CH 1000V 38A SOT-227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 19A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V.
Weitere Produktangebote IXFN38N100Q2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| IXFN38N100Q2 | Hersteller : IXYS |
 38A/1000V/MOS/1U |
auf Bestellung 107 Stücke: Lieferzeit 21-28 Tag (e) |
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IXFN38N100Q2 Produktcode: 21957
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Lieblingsprodukt
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Transistoren > MOSFET N-CH |
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IXFN38N100Q2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 38A 4-Pin SOT-227B |
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IXFN38N100Q2 | Hersteller : IXYS |
Description: MOSFET N-CH 1000V 38A SOT-227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 19A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFN38N100Q2 | Hersteller : IXYS |
MOSFET Modules 38 Amps 1000V 0.25 Rds |
Produkt ist nicht verfügbar |