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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 69.43 EUR |
| 10+ | 58.64 EUR |
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Technische Details IXFN400N15X3 IXYS
Description: MOSFET N-CH 150V 400A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V, Power Dissipation (Max): 695W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 8mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23700 pF @ 25 V.
Weitere Produktangebote IXFN400N15X3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFN400N15X3 | Hersteller : Littelfuse |
 Power MOSFET |
Produkt ist nicht verfügbar |
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IXFN400N15X3 | Hersteller : Littelfuse |
Power MOSFET |
Produkt ist nicht verfügbar |
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IXFN400N15X3 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 150V 400A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V Power Dissipation (Max): 695W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23700 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFN400N15X3 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 150V; 400A; SOT227B; screw; Idm: 900A Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 150V Drain current: 400A Pulsed drain current: 900A Power dissipation: 695W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 2.5mΩ Gate charge: 365nC Kind of channel: enhancement Reverse recovery time: 132ns Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |