Technische Details IXFN75N120SK Littelfuse
Description: SIC AND MULTICHIP DISCRETE, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 15V, Vgs(th) (Max) @ Id: 3.6V @ 18mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 1000 V.
Weitere Produktangebote IXFN75N120SK nach Preis ab 122.09 EUR bis 152.18 EUR
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IXFN75N120SK | IXYS |
 Description: SIC AND MULTICHIP DISCRETEPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 15V Vgs(th) (Max) @ Id: 3.6V @ 18mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 1000 V |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFN75N120SK |
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Hersteller: IXYS
Description: SIC AND MULTICHIP DISCRETE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 18mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 1000 V
Description: SIC AND MULTICHIP DISCRETE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 18mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 1000 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 152.18 EUR |
| 10+ | 122.09 EUR |