Technische Details IXFN80N50Q2 IXYS
Description: MOSFET N-CH 500V 72A SOT227B, Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 4.5V @ 8mA, Power Dissipation (Max): 890W (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Weitere Produktangebote IXFN80N50Q2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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 N-CH 500V 80A SOT-227B Транзистори |
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IXFN80N50Q2 | Hersteller : IXYS |
Description: MOSFET N-CH 500V 72A SOT227B Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-227B Vgs(th) (Max) @ Id: 4.5V @ 8mA Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
Produkt ist nicht verfügbar |
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IXFN80N50Q2 | Hersteller : IXYS |
Discrete Semiconductor Modules 80 Amps 500V 0.06 Rds |
Produkt ist nicht verfügbar |