auf Bestellung 298 Stücke:
Lieferzeit 329-343 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 12.35 EUR |
10+ | 10.37 EUR |
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Technische Details IXFP110N15T2 IXYS
Description: MOSFET N-CH 150V 110A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 55A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V.
Weitere Produktangebote IXFP110N15T2
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFP110N15T2 Produktcode: 113183 |
Transistoren > MOSFET N-CH |
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IXFP110N15T2 | Hersteller : Littelfuse | Trans MOSFET N-CH 150V 110A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXFP110N15T2 | Hersteller : Littelfuse | Trans MOSFET N-CH 150V 110A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXFP110N15T2 | Hersteller : Littelfuse | Trans MOSFET N-CH 150V 110A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXFP110N15T2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO220AB; 85ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 110A Power dissipation: 480W Case: TO220AB On-state resistance: 13mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 85ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFP110N15T2 | Hersteller : IXYS |
Description: MOSFET N-CH 150V 110A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 55A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFP110N15T2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO220AB; 85ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 110A Power dissipation: 480W Case: TO220AB On-state resistance: 13mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 85ns |
Produkt ist nicht verfügbar |