IXFP130N10T IXYS
Hersteller: IXYS
Description: MOSFET N-CH 100V 130A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details IXFP130N10T IXYS
Description: MOSFET N-CH 100V 130A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4.5V @ 1mA, Power Dissipation (Max): 360W (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IXFP130N10T
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFP130N10T | Hersteller : IXYS |
MOSFETs 130 Amps 100V |
Produkt ist nicht verfügbar |