IXFP130N10T IXYS
Hersteller: IXYS
Description: MOSFET N-CH 100V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
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Technische Details IXFP130N10T IXYS
Description: MOSFET N-CH 100V 130A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V.
Weitere Produktangebote IXFP130N10T
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXFP130N10T | IXYS |
MOSFETs 130 Amps 100V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXFP130N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 100V; 130A; 360W; TO220-3; 67ns Type of transistor: N-MOSFET Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO220-3 Gate-source voltage: 20V On-state resistance: 9.1mΩ Mounting: THT Kind of channel: enhancement Gate charge: 104nC Application: automotive industry Reverse recovery time: 67ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXFP130N10T |
|
Hersteller: IXYS
MOSFETs 130 Amps 100V
MOSFETs 130 Amps 100V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFP130N10T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 130A; 360W; TO220-3; 67ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 9.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 104nC
Application: automotive industry
Reverse recovery time: 67ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 130A; 360W; TO220-3; 67ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 9.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 104nC
Application: automotive industry
Reverse recovery time: 67ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH