IXFP26N50P3 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 260 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 10.45 EUR |
| 10+ | 7.26 EUR |
| 11+ | 6.86 EUR |
| 500+ | 6.61 EUR |
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Technische Details IXFP26N50P3 IXYS
Description: MOSFET N-CH 500V 26A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V.
Weitere Produktangebote IXFP26N50P3 nach Preis ab 6.86 EUR bis 14.57 EUR
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IXFP26N50P3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 500W Case: TO220AB On-state resistance: 0.25Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 260 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP26N50P3 | Hersteller : IXYS |
MOSFETs Polar3 HiPerFET Power MOSFET |
auf Bestellung 282 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP26N50P3 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 500V 26A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V |
auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP26N50P3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXFP26N50P3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |