| Anzahl | Preis |
|---|---|
| 1+ | 7.71 EUR |
| 10+ | 5.86 EUR |
| 50+ | 5.23 EUR |
| 100+ | 4.56 EUR |
| 250+ | 4.19 EUR |
| 500+ | 4.12 EUR |
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Technische Details IXFP36N20X3M IXYS
Description: MOSFET N-CH 200V 36A TO220, Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220 Isolated Tab, Vgs(th) (Max) @ Id: 4.5V @ 500µA, Power Dissipation (Max): 36W (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube.
Weitere Produktangebote IXFP36N20X3M
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFP36N20X3M | Hersteller : IXYS |
 Description: MOSFET N-CH 200V 36A TO220Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Isolated Tab Vgs(th) (Max) @ Id: 4.5V @ 500µA Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
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