Produkte > LITTELFUSE INC. > IXFP8N85XM
IXFP8N85XM

IXFP8N85XM Littelfuse Inc.

littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp8n85xm_datasheet.pdf.pdf
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 850V 8A TO220
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 850 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 Isolated Tab
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IXFP8N85XM Littelfuse Inc.

Description: MOSFET N-CH 850V 8A TO220, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Drain to Source Voltage (Vdss): 850 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220 Isolated Tab, Vgs(th) (Max) @ Id: 5.5V @ 250µA, Power Dissipation (Max): 33W (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc).

Weitere Produktangebote IXFP8N85XM

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFP8N85XM IXFP8N85XM Hersteller : IXYS media-3323110.pdf MOSFET MSFT N-CH ULTRA JNCT X3&44
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH