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IXFR180N06

IXFR180N06 IXYS


98753.pdf
Hersteller: IXYS
Description: MOSFET N-CH 60V 180A ISOPLUS247
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 560W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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Technische Details IXFR180N06 IXYS

Description: MOSFET N-CH 60V 180A ISOPLUS247, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: ISOPLUS247™, Vgs(th) (Max) @ Id: 4V @ 8mA, Power Dissipation (Max): 560W (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole.

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IXFR180N06 IXFR180N06 Hersteller : IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFR180N06-Datasheet.PDF MOSFETs 180 Amps 60V 0.005 Rds
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