IXFR180N15P Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 150V 100A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 90A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
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Technische Details IXFR180N15P Littelfuse Inc.
Description: MOSFET N-CH 150V 100A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 90A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: ISOPLUS247™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V.
Weitere Produktangebote IXFR180N15P
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXFR180N15P | IXYS |
MOSFETs 94 Amps 150V 0.011 Rds |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXFR180N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 150V; 100A; 300W; 200ns Type of transistor: N-MOSFET Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 100A Power dissipation: 300W Case: ISOPLUS247™ Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube Reverse recovery time: 200ns Gate charge: 240nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFR180N15P |
|
Hersteller: IXYS
MOSFETs 94 Amps 150V 0.011 Rds
MOSFETs 94 Amps 150V 0.011 Rds
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFR180N15P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 150V; 100A; 300W; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 200ns
Gate charge: 240nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 150V; 100A; 300W; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 200ns
Gate charge: 240nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH