IXFR200N10P IXYS
Hersteller: IXYS
Description: MOSFET N-CH 100V 133A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 133A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Description: MOSFET N-CH 100V 133A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 133A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 29.66 EUR |
30+ | 24.01 EUR |
120+ | 22.6 EUR |
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Technische Details IXFR200N10P IXYS
Description: MOSFET N-CH 100V 133A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 133A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: ISOPLUS247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V.
Weitere Produktangebote IXFR200N10P nach Preis ab 29.43 EUR bis 48.59 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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IXFR200N10P | Hersteller : IXYS | MOSFET 133 Amps 100V 0.0075 Rds |
auf Bestellung 2 Stücke: Lieferzeit 14-28 Tag (e) |
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IXFR200N10P | Hersteller : Littelfuse | Trans MOSFET N-CH Si 100V 133A 3-Pin(3+Tab) ISOPLUS 247 |
Produkt ist nicht verfügbar |
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IXFR200N10P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™ Mounting: THT Case: ISOPLUS247™ Kind of package: tube Polarisation: unipolar On-state resistance: 9mΩ Gate charge: 235nC Kind of channel: enhanced Drain current: 120A Drain-source voltage: 100V Type of transistor: N-MOSFET Power dissipation: 300W Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
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IXFR200N10P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™ Mounting: THT Case: ISOPLUS247™ Kind of package: tube Polarisation: unipolar On-state resistance: 9mΩ Gate charge: 235nC Kind of channel: enhanced Drain current: 120A Drain-source voltage: 100V Type of transistor: N-MOSFET Power dissipation: 300W |
Produkt ist nicht verfügbar |