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IXFR20N120P

IXFR20N120P IXYS


IXFR20N120P.pdf Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
3+29.16 EUR
Mindestbestellmenge: 3
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Technische Details IXFR20N120P IXYS

Description: MOSFET N-CH 1200V 13A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 630mOhm @ 10A, 10V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: ISOPLUS247™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V.

Weitere Produktangebote IXFR20N120P nach Preis ab 29.16 EUR bis 29.16 EUR

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IXFR20N120P IXFR20N120P Hersteller : IXYS IXFR20N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3+29.16 EUR
Mindestbestellmenge: 3
IXFR20N120P IXFR20N120P Hersteller : Littelfuse te_mosfets_n-channel_hiperfets_ixfr20n120p_datasheet.pdf.pdf Trans MOSFET N-CH Si 1.2KV 13A 3-Pin(3+Tab) ISOPLUS 247
Produkt ist nicht verfügbar
IXFR20N120P IXFR20N120P Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr20n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 13A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 10A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Produkt ist nicht verfügbar
IXFR20N120P IXFR20N120P Hersteller : IXYS media-3320716.pdf MOSFET 26 Amps 1200V 1 Rds
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