IXFR20N120P IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
| Anzahl | Privatkunde |
|---|---|
| 2+ | 43.42 EUR |
| 3+ | 38.94 EUR |
| 10+ | 34.44 EUR |
| 30+ | 31.04 EUR |
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Technische Details IXFR20N120P IXYS
Description: MOSFET N-CH 1200V 13A ISOPLUS247, Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: ISOPLUS247™, Vgs(th) (Max) @ Id: 6.5V @ 1mA, Power Dissipation (Max): 290W (Tc), Rds On (Max) @ Id, Vgs: 630mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXFR20N120P
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
.jpg "IXFR20N120P") |
IXFR20N120P | IXYS |
Description: MOSFET N-CH 1200V 13A ISOPLUS247 Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: ISOPLUS247™ Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 630mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXFR20N120P | IXYS |
MOSFETs 26 Amps 1200V 1 Rds |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXFR20N120P |
|
Hersteller: IXYS
Description: MOSFET N-CH 1200V 13A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 1200V 13A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFR20N120P |
|
Hersteller: IXYS
MOSFETs 26 Amps 1200V 1 Rds
MOSFETs 26 Amps 1200V 1 Rds
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH