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Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 37.32 EUR |
| 3+ | 24.02 EUR |
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Technische Details IXFR230N20T IXYS
Description: MOSFET N-CH 200V 156A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 156A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 60A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: ISOPLUS247™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V.
Weitere Produktangebote IXFR230N20T
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IXFR230N20T | Hersteller : Littelfuse |
 Trans MOSFET N-CH Si 200V 156A 3-Pin(3+Tab) ISOPLUS 247 |
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IXFR230N20T | Hersteller : IXYS |
Description: MOSFET N-CH 200V 156A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 156A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 60A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: ISOPLUS247™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFR230N20T | Hersteller : IXYS |
MOSFETs GigaMOS Power MOSFET |
Produkt ist nicht verfügbar |