IXFR230N20T IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 156A; 600W; ISOPLUS247™
Drain-source voltage: 200V
Drain current: 156A
Case: ISOPLUS247™
Polarisation: unipolar
On-state resistance: 8mΩ
Power dissipation: 600W
Kind of channel: enhancement
Gate charge: 358nC
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
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Technische Details IXFR230N20T IXYS
Description: MOSFET N-CH 200V 156A ISOPLUS247, Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: ISOPLUS247™, Vgs(th) (Max) @ Id: 5V @ 8mA, Power Dissipation (Max): 600W (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 156A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXFR230N20T
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
.jpg "IXFR230N20T") |
IXFR230N20T | IXYS |
Description: MOSFET N-CH 200V 156A ISOPLUS247 Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: ISOPLUS247™ Vgs(th) (Max) @ Id: 5V @ 8mA Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 156A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXFR230N20T | IXYS |
MOSFETs GigaMOS Power MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXFR230N20T |
|
Hersteller: IXYS
Description: MOSFET N-CH 200V 156A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 200V 156A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFR230N20T |
|
Hersteller: IXYS
MOSFETs GigaMOS Power MOSFET
MOSFETs GigaMOS Power MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH