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IXFR230N20T

IXFR230N20T IXYS

littelfuse_discrete_mosfets_n-channel_trench_gate_ixfr230n20t_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 200V 156A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details IXFR230N20T IXYS

Description: MOSFET N-CH 200V 156A ISOPLUS247, Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: ISOPLUS247™, Vgs(th) (Max) @ Id: 5V @ 8mA, Power Dissipation (Max): 600W (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 156A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.

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IXFR230N20T IXFR230N20T Hersteller : IXYS media-3321081.pdf MOSFETs GigaMOS Power MOSFET
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