Technische Details IXFR34N80
Description: MOSFET N-CH 800V 28A ISOPLUS247, Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: ISOPLUS247™, Vgs(th) (Max) @ Id: 4V @ 8mA, Power Dissipation (Max): 416W (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 17A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXFR34N80
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IXFR34N80 | Hersteller : IXYS |
Description: MOSFET N-CH 800V 28A ISOPLUS247Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: ISOPLUS247™ Vgs(th) (Max) @ Id: 4V @ 8mA Power Dissipation (Max): 416W (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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IXFR34N80 | Hersteller : IXYS |
MOSFETs 800V 28A |
Produkt ist nicht verfügbar |


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