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IXFR44N50Q

IXFR44N50Q IXYS


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Hersteller: IXYS
Description: MOSFET N-CH 500V 34A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details IXFR44N50Q IXYS

Description: MOSFET N-CH 500V 34A ISOPLUS247, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: ISOPLUS247™, Vgs(th) (Max) @ Id: 4V @ 4mA, Power Dissipation (Max): 310W (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 22A, 10V, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.

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IXFR44N50Q IXFR44N50Q Hersteller : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXFR4_N50Q_Datasheet.PDF MOSFETs 34 Amps 500V 0.12 Rds
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