| Anzahl | Preis |
|---|---|
| 1+ | 39.11 EUR |
| 10+ | 31.94 EUR |
| 120+ | 28.23 EUR |
| 510+ | 28 EUR |
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Technische Details IXFR80N50P IXYS
Description: MOSFET N-CH 500V 45A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 72mOhm @ 40A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: ISOPLUS247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V.
Weitere Produktangebote IXFR80N50P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IXFR80N50P | Hersteller : Littelfuse |
 Trans MOSFET N-CH Si 500V 45A 3-Pin(3+Tab) ISOPLUS 247 |
Produkt ist nicht verfügbar |
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| IXFR80N50P | Hersteller : IXYS/Littelfuse |
N-канальний ПТ, Udss, В = 500, Id = 45 А, Ptot, Вт = 360, Тип монт. = вивідний, Ciss, пФ @ Uds, В = 12700 @ 25, Qg, нКл = 197 @ 10 В, Rds = 72 мОм @ 40 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 5 В @ 8 мA,... Група товару: Транзистори Корпус: ISOPLUS-247 Anzahl je Verpackung: 30 Stücke |
Produkt ist nicht verfügbar |
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| IXFR80N50P |
MOSFET N-CH 500V 45A ISOPLUS247 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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IXFR80N50P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 500V 45A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 40A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: ISOPLUS247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V |
Produkt ist nicht verfügbar |