auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 22.63 EUR |
| 10+ | 19.76 EUR |
| 25+ | 18.42 EUR |
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Technische Details IXFT150N20T Littelfuse
Description: MOSFET N-CH 200V 150A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 75A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11700 pF @ 25 V.
Weitere Produktangebote IXFT150N20T nach Preis ab 18.42 EUR bis 22.63 EUR
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IXFT150N20T | Hersteller : Littelfuse |
 Trans MOSFET N-CH 200V 150A 3-Pin(2+Tab) TO-268AA |
auf Bestellung 97 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFT150N20T | Hersteller : Littelfuse |
Trans MOSFET N-CH 200V 150A 3-Pin(2+Tab) TO-268AA |
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IXFT150N20T | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 150A Power dissipation: 890W Case: TO268 On-state resistance: 15mΩ Mounting: SMD Gate charge: 177nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 100ns Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
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IXFT150N20T | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 200V 150A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 75A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11700 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFT150N20T | Hersteller : IXYS |
MOSFETs Trench HiperFETs Power MOSFETs |
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IXFT150N20T | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 150A Power dissipation: 890W Case: TO268 On-state resistance: 15mΩ Mounting: SMD Gate charge: 177nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 100ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |