IXFX170N20P Littelfuse
auf Bestellung 231 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 22.9 EUR |
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Technische Details IXFX170N20P Littelfuse
Description: MOSFET N-CH 200V 170A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 500mA, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V.
Weitere Produktangebote IXFX170N20P nach Preis ab 22.9 EUR bis 22.9 EUR
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IXFX170N20P | Hersteller : Littelfuse |
 Trans MOSFET N-CH 200V 170A 3-Pin(3+Tab) PLUS 247 Tube |
auf Bestellung 231 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFX170N20P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1250W; PLUS247™ Mounting: THT Case: PLUS247™ Drain-source voltage: 200V Drain current: 170A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Gate charge: 185nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFX170N20P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 200V 170A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 500mA, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFX170N20P | Hersteller : IXYS |
MOSFETs Polar HiperFET Power MOSFET |
Produkt ist nicht verfügbar |
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IXFX170N20P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1250W; PLUS247™ Mounting: THT Case: PLUS247™ Drain-source voltage: 200V Drain current: 170A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Gate charge: 185nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |