IXFX300N20X3 IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Drain-source voltage: 200V
Drain current: 300A
On-state resistance: 4mΩ
Power dissipation: 1.25kW
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
Mounting: THT
Polarisation: unipolar
Gate charge: 375nC
Reverse recovery time: 170ns
Kind of channel: enhancement
Case: PLUS247™
Type of transistor: N-MOSFET
Kind of package: tube
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Technische Details IXFX300N20X3 IXYS
Description: MOSFET N-CH 200V 300A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 150A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 8mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V.
Weitere Produktangebote IXFX300N20X3 nach Preis ab 43.09 EUR bis 70.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXFX300N20X3 | IXYS |
Description: MOSFET N-CH 200V 300A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 150A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V |
auf Bestellung 730 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFX300N20X3 | IXYS |
MOSFETs N-Ch 200V Enh FET 200Vdgr 300A 4mOhm |
auf Bestellung 244 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFX300N20X3 |
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Hersteller: IXYS
Description: MOSFET N-CH 200V 300A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 150A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
Description: MOSFET N-CH 200V 300A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 150A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
auf Bestellung 730 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 58.67 EUR |
| 30+ | 44.65 EUR |
| 120+ | 43.09 EUR |
| IXFX300N20X3 |
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Hersteller: IXYS
MOSFETs N-Ch 200V Enh FET 200Vdgr 300A 4mOhm
MOSFETs N-Ch 200V Enh FET 200Vdgr 300A 4mOhm
auf Bestellung 244 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 70.83 EUR |
| 10+ | 52.99 EUR |