Technische Details IXFX48N50Q IXYS
Description: MOSFET N-CH 500V 48A PLUS247-3, Package / Case: TO-247-3 Variant, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: PLUS247™-3, Vgs(th) (Max) @ Id: 4V @ 4mA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 24A, 10V, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole.
Weitere Produktangebote IXFX48N50Q
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| IXFX48N50Q |
 PLUS247 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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IXFX48N50Q | Hersteller : IXYS |
Description: MOSFET N-CH 500V 48A PLUS247-3 Package / Case: TO-247-3 Variant Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: PLUS247™-3 Vgs(th) (Max) @ Id: 4V @ 4mA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 24A, 10V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
Produkt ist nicht verfügbar |
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IXFX48N50Q | Hersteller : IXYS |
MOSFETs 48 Amps 500V 0.1 Rds |
Produkt ist nicht verfügbar |