IXFX66N85X Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 850V 66A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 1+ | 53.62 EUR |
| 30+ | 34.66 EUR |
| 120+ | 33.08 EUR |
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Technische Details IXFX66N85X Littelfuse Inc.
Description: MOSFET N-CH 850V 66A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 8mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V.
Weitere Produktangebote IXFX66N85X
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|---|---|---|---|---|---|
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IXFX66N85X | IXYS |
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IXFX66N85X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; PLUS247™; 250ns Mounting: THT Power dissipation: 1.25kW Gate charge: 230nC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 66A Kind of channel: enhancement Drain-source voltage: 850V Type of transistor: N-MOSFET Kind of package: tube Case: PLUS247™ On-state resistance: 65mΩ Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFX66N85X | Littelfuse |
Trans MOSFET N-CH 850V 66A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXFX66N85X |
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Hersteller: IXYS
MOSFETs 850V Ultra Junction X-Class Pwr MOSFET
MOSFETs 850V Ultra Junction X-Class Pwr MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFX66N85X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; PLUS247™; 250ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 65mΩ
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; PLUS247™; 250ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 65mΩ
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFX66N85X |
|
Hersteller: Littelfuse
Trans MOSFET N-CH 850V 66A 3-Pin(3+Tab) PLUS 247
Trans MOSFET N-CH 850V 66A 3-Pin(3+Tab) PLUS 247
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH