Technische Details IXGT16N170 Littelfuse
Category: SMD IGBT transistors, Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268, Collector-emitter voltage: 1.7kV, Gate-emitter voltage: ±20V, Collector current: 16A, Pulsed collector current: 80A, Turn-on time: 90ns, Turn-off time: 1.6µs, Type of transistor: IGBT, Power dissipation: 190W, Kind of package: tube, Features of semiconductor devices: high voltage, Gate charge: 78nC, Technology: NPT, Mounting: SMD, Case: TO268, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXGT16N170
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IXGT16N170 | Hersteller : IXYS |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268 Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 16A Pulsed collector current: 80A Turn-on time: 90ns Turn-off time: 1.6µs Type of transistor: IGBT Power dissipation: 190W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 78nC Technology: NPT Mounting: SMD Case: TO268 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXGT16N170 | Hersteller : IXYS |
Description: IGBT 1700V 32A 190W TO268 |
Produkt ist nicht verfügbar |
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IXGT16N170 | Hersteller : IXYS |
IGBT Transistors 32 Amps 1700 V 3.5 V Rds |
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IXGT16N170 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268 Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 16A Pulsed collector current: 80A Turn-on time: 90ns Turn-off time: 1.6µs Type of transistor: IGBT Power dissipation: 190W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 78nC Technology: NPT Mounting: SMD Case: TO268 |
Produkt ist nicht verfügbar |