Technische Details IXGT24N170 IXYS
Category: SMD IGBT transistors, Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268, Features of semiconductor devices: high voltage, Type of transistor: IGBT, Technology: NPT, Mounting: SMD, Case: TO268, Turn-on time: 105ns, Gate charge: 106nC, Turn-off time: 560ns, Gate-emitter voltage: ±20V, Collector current: 24A, Pulsed collector current: 150A, Power dissipation: 250W, Collector-emitter voltage: 1.7kV, Kind of package: tube.
Weitere Produktangebote IXGT24N170
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IXGT24N170 | Hersteller : IXYS |
 IGBTs 24 Amps 1200 V 3.3 V Rds |
Produkt ist nicht verfügbar |
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IXGT24N170 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268 Features of semiconductor devices: high voltage Type of transistor: IGBT Technology: NPT Mounting: SMD Case: TO268 Turn-on time: 105ns Gate charge: 106nC Turn-off time: 560ns Gate-emitter voltage: ±20V Collector current: 24A Pulsed collector current: 150A Power dissipation: 250W Collector-emitter voltage: 1.7kV Kind of package: tube |
Produkt ist nicht verfügbar |