auf Bestellung 1302 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 19.18 EUR |
| 10+ | 16.3 EUR |
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Technische Details IXGT6N170A IXYS
Description: IGBT NPT 1700V 6A TO-268AA, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A, Supplier Device Package: TO-268AA, IGBT Type: NPT, Td (on/off) @ 25°C: 46ns/220ns, Switching Energy: 590µJ (on), 180µJ (off), Test Condition: 850V, 6A, 33Ohm, 15V, Gate Charge: 18.5 nC, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 14 A, Power - Max: 75 W.
Weitere Produktangebote IXGT6N170A nach Preis ab 12.21 EUR bis 23.27 EUR
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IXGT6N170A | Hersteller : IXYS |
 Description: IGBT NPT 1700V 6A TO-268AAPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A Supplier Device Package: TO-268AA IGBT Type: NPT Td (on/off) @ 25°C: 46ns/220ns Switching Energy: 590µJ (on), 180µJ (off) Test Condition: 850V, 6A, 33Ohm, 15V Gate Charge: 18.5 nC Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 14 A Power - Max: 75 W |
auf Bestellung 308 Stücke: Lieferzeit 10-14 Tag (e) |
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IXGT6N170A | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 3A; 75W; TO268; Features: high voltage Case: TO268 Mounting: SMD Kind of package: tube Gate charge: 18.5nC Turn-on time: 91ns Turn-off time: 271ns Power dissipation: 75W Collector current: 3A Pulsed collector current: 14A Gate-emitter voltage: ±20V Collector-emitter voltage: 1.7kV Technology: NPT Features of semiconductor devices: high voltage Type of transistor: IGBT |
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