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IXSH30N60B2D1

IXSH30N60B2D1 IXYS



Hersteller: IXYS
Description: IGBT PT 600V 48A TO-247AD
Power - Max: 250 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Gate Charge: 50 nC
Test Condition: 400V, 24A, 5Ohm, 15V
Switching Energy: 550µJ (off)
Td (on/off) @ 25°C: 30ns/130ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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Technische Details IXSH30N60B2D1 IXYS

Description: IGBT PT 600V 48A TO-247AD, Power - Max: 250 W, Current - Collector Pulsed (Icm): 90 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 48 A, Gate Charge: 50 nC, Test Condition: 400V, 24A, 5Ohm, 15V, Switching Energy: 550µJ (off), Td (on/off) @ 25°C: 30ns/130ns, IGBT Type: PT, Supplier Device Package: TO-247AD, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A, Reverse Recovery Time (trr): 30 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk.

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IXSH30N60B2D1 Hersteller : IXYS IGBT Transistors 30 Amps 600V 2.5 Rds
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