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IXTA60N10T-TRL

IXTA60N10T-TRL IXYS

littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_60n10t_datasheet.pdf.pdf Hersteller: IXYS
Description: MOSFET N-CH 100V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+2.5 EUR
1600+ 2.12 EUR
2400+ 2.02 EUR
5600+ 1.94 EUR
Mindestbestellmenge: 800
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Technische Details IXTA60N10T-TRL IXYS

Description: MOSFET N-CH 100V 60A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V, Power Dissipation (Max): 176W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V.

Weitere Produktangebote IXTA60N10T-TRL nach Preis ab 2.16 EUR bis 4.51 EUR

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Preis ohne MwSt
IXTA60N10T-TRL IXTA60N10T-TRL Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_60n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 60A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 6399 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.47 EUR
10+ 3.71 EUR
100+ 2.95 EUR
Mindestbestellmenge: 4
IXTA60N10T-TRL IXTA60N10T-TRL Hersteller : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Trench_Gate_-1622615.pdf MOSFET IXTA60N10T TRL
auf Bestellung 780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.51 EUR
10+ 3.75 EUR
100+ 2.97 EUR
250+ 2.87 EUR
500+ 2.5 EUR
800+ 2.16 EUR
IXTA60N10TTRL IXTA60N10TTRL Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 100V 60A Automotive 3-Pin(2+Tab) D2PAK T/R
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IXTA60N10T-TRL IXTA60N10T-TRL Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 100V 60A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar