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IXTH2N150L

IXTH2N150L Littelfuse Inc.


Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1500V 2A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 15Ohm @ 1A, 20V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 8.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
auf Bestellung 1110 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.11 EUR
30+17.46 EUR
120+16.20 EUR
510+15.47 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTH2N150L Littelfuse Inc.

Description: MOSFET N-CH 1500V 2A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 15Ohm @ 1A, 20V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 8.5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V.

Weitere Produktangebote IXTH2N150L nach Preis ab 18.27 EUR bis 22.95 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTH2N150L IXTH2N150L Hersteller : IXYS media-3321785.pdf MOSFET MSFT N-CH LINEAR STD
auf Bestellung 381 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.95 EUR
10+20.22 EUR
30+19.68 EUR
60+18.57 EUR
120+18.27 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTH2N150L IXTH2N150L Hersteller : Littelfuse screte_mosfets_n-channel_linear_ixth2n150l_datasheet.pdf.pdf Power MOSFET
Produkt ist nicht verfügbar
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IXTH2N150L IXTH2N150L Hersteller : IXYS IXTH2N150L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2A; 290W; TO247-3; 1.86us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 15Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.86µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH2N150L IXTH2N150L Hersteller : IXYS IXTH2N150L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2A; 290W; TO247-3; 1.86us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 15Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.86µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH