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Technische Details IXTH88N15 IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 150V; 88A; 400W; TO247-3; 150ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 150V, Drain current: 88A, Power dissipation: 400W, Case: TO247-3, On-state resistance: 22mΩ, Mounting: THT, Gate charge: 170nC, Kind of package: tube, Kind of channel: enhancement, Reverse recovery time: 150ns, Features of semiconductor devices: standard power mosfet.
Weitere Produktangebote IXTH88N15
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXTH88N15 | IXYS |
 MOSFETs 88 Amps 150V 0.022 Rds |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXTH88N15 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 88A; 400W; TO247-3; 150ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 88A Power dissipation: 400W Case: TO247-3 On-state resistance: 22mΩ Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Features of semiconductor devices: standard power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTH88N15 |
|
Hersteller: IXYS
MOSFETs 88 Amps 150V 0.022 Rds
MOSFETs 88 Amps 150V 0.022 Rds
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH88N15 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 88A; 400W; TO247-3; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 88A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Features of semiconductor devices: standard power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 88A; 400W; TO247-3; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 88A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH