IXTK17N120L IXYS
Hersteller: IXYS
Description: MOSFET N-CH 1200V 17A TO264
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
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Technische Details IXTK17N120L IXYS
Description: MOSFET N-CH 1200V 17A TO264, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 20V, Supplier Device Package: TO-264 (IXTK), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 700W (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V.
Weitere Produktangebote IXTK17N120L
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTK17N120L | Hersteller : IXYS |
 MOSFET 17 Amps 1200V |
Produkt ist nicht verfügbar |