IXTK82N25P Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 250V 82A TO264
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.56 EUR |
| 25+ | 13.46 EUR |
| 100+ | 11.75 EUR |
| 500+ | 11.32 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTK82N25P Littelfuse Inc.
Description: MOSFET N-CH 250V 82A TO264, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-264 (IXTK), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V, Current - Continuous Drain (Id) @ 25°C: 82A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.
Weitere Produktangebote IXTK82N25P nach Preis ab 14.08 EUR bis 24.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXTK82N25P | IXYS |
MOSFETs 82 Amps 250V 0.035 Rds |
auf Bestellung 362 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTK82N25P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO264 Mounting: THT Kind of channel: enhancement Technology: PolarHT™ Type of transistor: N-MOSFET Case: TO264 Kind of package: tube Drain-source voltage: 250V Drain current: 82A Reverse recovery time: 200ns Gate charge: 142nC On-state resistance: 38mΩ Gate-source voltage: ±20V Power dissipation: 500W Polarisation: unipolar |
auf Bestellung 279 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXTK82N25P |
|
Hersteller: IXYS
MOSFETs 82 Amps 250V 0.035 Rds
MOSFETs 82 Amps 250V 0.035 Rds
auf Bestellung 362 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.4 EUR |
| 10+ | 16.02 EUR |
| 100+ | 14.08 EUR |
| IXTK82N25P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: PolarHT™
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 250V
Drain current: 82A
Reverse recovery time: 200ns
Gate charge: 142nC
On-state resistance: 38mΩ
Gate-source voltage: ±20V
Power dissipation: 500W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: PolarHT™
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 250V
Drain current: 82A
Reverse recovery time: 200ns
Gate charge: 142nC
On-state resistance: 38mΩ
Gate-source voltage: ±20V
Power dissipation: 500W
Polarisation: unipolar
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)