| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.8 EUR |
| 10+ | 14.74 EUR |
| 100+ | 14.08 EUR |
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Technische Details IXTK82N25P IXYS
Description: MOSFET N-CH 250V 82A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 82A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-264 (IXTK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V.
Weitere Produktangebote IXTK82N25P nach Preis ab 13.96 EUR bis 26.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXTK82N25P | IXYS |
 Description: MOSFET N-CH 250V 82A TO264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-264 (IXTK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V |
auf Bestellung 464 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTK82N25P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO264 Mounting: THT Power dissipation: 500W Gate charge: 142nC Polarisation: unipolar Technology: PolarHT™ Drain current: 82A Kind of channel: enhancement Drain-source voltage: 250V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO264 On-state resistance: 38mΩ Reverse recovery time: 200ns |
auf Bestellung 271 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXTK82N25P |
|
Hersteller: IXYS
Description: MOSFET N-CH 250V 82A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Description: MOSFET N-CH 250V 82A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
auf Bestellung 464 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.32 EUR |
| 25+ | 16.34 EUR |
| 50+ | 15.04 EUR |
| 100+ | 13.96 EUR |
| IXTK82N25P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO264
Mounting: THT
Power dissipation: 500W
Gate charge: 142nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 82A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 38mΩ
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO264
Mounting: THT
Power dissipation: 500W
Gate charge: 142nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 82A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 38mΩ
Reverse recovery time: 200ns
auf Bestellung 271 Stücke:
Lieferzeit 14-21 Tag (e)