IXTL2x180N10T IXYS
Hersteller: IXYS
Description: MOSFET 2N-CH 100V 100A I5-PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 100A
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUSi5-Pak™
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Technische Details IXTL2x180N10T IXYS
Description: MOSFET 2N-CH 100V 100A I5-PAK, Packaging: Tube, Package / Case: ISOPLUSi5-Pak™, Mounting Type: Through Hole, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 100A, Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V, Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V, Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: ISOPLUSi5-Pak™.
Weitere Produktangebote IXTL2x180N10T
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXTL2x180N10T | IXYS |
MOSFETs 180 Amps 100V 6.1 Rds |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTL2x180N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench; 100V; 100A; 150W; 60ns Type of transistor: N-MOSFET Technology: Trench Drain-source voltage: 100V Drain current: 100A Power dissipation: 150W Gate-source voltage: 20V On-state resistance: 9mΩ Mounting: THT Kind of channel: enhancement Reverse recovery time: 60ns Gate charge: 151nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTL2x180N10T |
|
Hersteller: IXYS
MOSFETs 180 Amps 100V 6.1 Rds
MOSFETs 180 Amps 100V 6.1 Rds
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTL2x180N10T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench; 100V; 100A; 150W; 60ns
Type of transistor: N-MOSFET
Technology: Trench
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 150W
Gate-source voltage: 20V
On-state resistance: 9mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 60ns
Gate charge: 151nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench; 100V; 100A; 150W; 60ns
Type of transistor: N-MOSFET
Technology: Trench
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 150W
Gate-source voltage: 20V
On-state resistance: 9mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 60ns
Gate charge: 151nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH