
IXTN46N50L Littelfuse Inc.

Description: MOSFET N-CH 500V 46A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 70.86 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTN46N50L Littelfuse Inc.
Description: MOSFET N-CH 500V 46A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 20V, Power Dissipation (Max): 700W (Tc), Vgs(th) (Max) @ Id: 6V @ 250µA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V.
Weitere Produktangebote IXTN46N50L nach Preis ab 77.32 EUR bis 77.32 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
---|---|---|---|---|---|---|---|---|---|
![]() |
IXTN46N50L | Hersteller : IXYS |
![]() |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||
![]() |
IXTN46N50L | Hersteller : Littelfuse |
![]() |
Produkt ist nicht verfügbar |
|||||
![]() |
IXTN46N50L | Hersteller : IXYS |
![]() Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 46A Electrical mounting: screw On-state resistance: 0.16Ω Pulsed drain current: 100A Power dissipation: 700W Gate-source voltage: ±40V Mechanical mounting: screw Gate charge: 260nC Kind of channel: enhancement Case: SOT227B Reverse recovery time: 0.6µs Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||
![]() |
IXTN46N50L | Hersteller : IXYS |
![]() Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 46A Electrical mounting: screw On-state resistance: 0.16Ω Pulsed drain current: 100A Power dissipation: 700W Gate-source voltage: ±40V Mechanical mounting: screw Gate charge: 260nC Kind of channel: enhancement Case: SOT227B Reverse recovery time: 0.6µs Polarisation: unipolar |
Produkt ist nicht verfügbar |