IXTP120N20X4 IXYS
Hersteller: IXYS
Description: MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 (IXTP)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 2+ | 14.43 EUR |
| 50+ | 7.96 EUR |
| 100+ | 7.34 EUR |
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Technische Details IXTP120N20X4 IXYS
Description: MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220 (IXTP), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 417W (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IXTP120N20X4 nach Preis ab 8.68 EUR bis 17.44 EUR
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IXTP120N20X4 | Hersteller : IXYS |
MOSFETs 200V, 120A, Ultra junction X4, TO-220 package, MOSFET |
auf Bestellung 623 Stücke: Lieferzeit 10-14 Tag (e) |
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