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IXTP1R4N120P

IXTP1R4N120P Littelfuse Inc.

littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n120p_datasheet.pdf.pdf
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1200V 1.4A TO220AB
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 100µA
auf Bestellung 601 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.57 EUR
50+6.79 EUR
100+5.82 EUR
500+5.17 EUR
Mindestbestellmenge: 3
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Technische Details IXTP1R4N120P Littelfuse Inc.

Description: MOSFET N-CH 1200V 1.4A TO220AB, Power Dissipation (Max): 86W (Tc), Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4.5V @ 100µA.

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IXTP1R4N120P IXTP1R4N120P Hersteller : IXYS ixys_s_a0008595723_1-2273166.pdf MOSFET 1.4 Amps 1200V 15 Rds
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH