
IXTP1R4N120P Littelfuse Inc.

Description: MOSFET N-CH 1200V 1.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
auf Bestellung 601 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 8.57 EUR |
50+ | 6.79 EUR |
100+ | 5.82 EUR |
500+ | 5.17 EUR |
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Technische Details IXTP1R4N120P Littelfuse Inc.
Description: MOSFET N-CH 1200V 1.4A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V.
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IXTP1R4N120P | Hersteller : IXYS |
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auf Bestellung 38 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP1R4N120P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTP1R4N120P | Hersteller : IXYS |
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Produkt ist nicht verfügbar |