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Technische Details IXTP3N60P IXYS
Description: MOSFET N-CH 600V 3A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 411 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 5.5V @ 50µA, Power Dissipation (Max): 70W (Tc), Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
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IXTP3N60P | Hersteller : IXYS |
 Description: MOSFET N-CH 600V 3A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 411 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5.5V @ 50µA Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
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