IXTP48N20T IXYS
Hersteller: IXYS
Description: MOSFET N-CH 200V 48A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.21 EUR |
| 50+ | 4.8 EUR |
| 100+ | 4.37 EUR |
| 500+ | 3.62 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3 Stücke
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Produktbewertung abgeben
Technische Details IXTP48N20T IXYS
Description: MOSFET N-CH 200V 48A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V.
Weitere Produktangebote IXTP48N20T nach Preis ab 4.46 EUR bis 10.91 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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IXTP48N20T | IXYS |
MOSFETs 48 Amps 200V 50 Rds |
auf Bestellung 693 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP48N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 48A Power dissipation: 250W Case: TO220AB On-state resistance: 50mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 60nC Reverse recovery time: 130ns Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 299 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXTP48N20T |
|
Hersteller: IXYS
MOSFETs 48 Amps 200V 50 Rds
MOSFETs 48 Amps 200V 50 Rds
auf Bestellung 693 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.91 EUR |
| 10+ | 5.74 EUR |
| 100+ | 5.21 EUR |
| 500+ | 5.02 EUR |
| 1000+ | 4.46 EUR |
| IXTP48N20T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 60nC
Reverse recovery time: 130ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 60nC
Reverse recovery time: 130ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)