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IXTP5N50P IXYS

DS99446G(IXTU-TY-TA-TP5N50P)-1145319.pdf
Hersteller: IXYS
MOSFET 4.8 Amps 500V 1.4 Ohms Rds
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Technische Details IXTP5N50P IXYS

Description: MOSFET N-CH 500V 4.8A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 5.5V @ 50µA, Power Dissipation (Max): 89W (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.

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IXTP5N50P IXTP5N50P Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_5n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 4.8A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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