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Technische Details IXTP86N20X4 IXYS
Description: MOSFET 200V 86A N-CH ULTRA TO220, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V, Current - Continuous Drain (Id) @ 25°C: 86A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V.
Weitere Produktangebote IXTP86N20X4 nach Preis ab 16.02 EUR bis 16.02 EUR
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IXTP86N20X4 | Hersteller : Littelfuse Inc. |
 Description: MOSFET 200V 86A N-CH ULTRA TO220Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) |
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