| Anzahl | Preis |
|---|---|
| 1+ | 17.81 EUR |
| 10+ | 13.5 EUR |
| 120+ | 11.25 EUR |
| 510+ | 10.16 EUR |
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Technische Details IXTQ120N15P IXYS
Description: MOSFET N-CH 150V 120A TO3P, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3P, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 600W (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.
Weitere Produktangebote IXTQ120N15P
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTQ120N15P | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 150V 120A TO3PInput Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3P Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
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