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IXTQ160N10T

IXTQ160N10T IXYS

littelfuse_discrete_mosfets_n-channel_trench_gate_ixth160n10t_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 100V 160A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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Technische Details IXTQ160N10T IXYS

Description: MOSFET N-CH 100V 160A TO3P, Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3P, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 430W (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.

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IXTQ160N10T IXTQ160N10T IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Trench_Gate_IXTQ160N10T_Datasheet.PDF MOSFETs 160 Amps 100V 6.9 Rds
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IXTQ160N10T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixth160n10t_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 160A; 430W; TO3P; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 430W
Case: TO3P
Gate-source voltage: 30V
On-state resistance: 7mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 100ns
Gate charge: 132nC
Application: automotive industry
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IXTQ160N10T IXTQ160N10T Littelfuse _mosfets_n-channel_trench_gate_ixth160n10t_datasheet.pdf.pdf Trans MOSFET N-CH 100V 160A Automotive 3-Pin(3+Tab) TO-3P
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IXTQ160N10T Littelfuse_Discrete_MOSFETs_N_Channel_Trench_Gate_IXTQ160N10T_Datasheet.PDF
IXTQ160N10T
Hersteller: IXYS
MOSFETs 160 Amps 100V 6.9 Rds
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IXTQ160N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixth160n10t_datasheet.pdf.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 160A; 430W; TO3P; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 430W
Case: TO3P
Gate-source voltage: 30V
On-state resistance: 7mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 100ns
Gate charge: 132nC
Application: automotive industry
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Mindestbestellmenge: 300 Stücke
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IXTQ160N10T _mosfets_n-channel_trench_gate_ixth160n10t_datasheet.pdf.pdf
IXTQ160N10T
Hersteller: Littelfuse
Trans MOSFET N-CH 100V 160A Automotive 3-Pin(3+Tab) TO-3P
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Mindestbestellmenge: 30 Stücke
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