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IXTQ182N055T

IXTQ182N055T IXYS

littelfuse_discrete_mosfets_n-channel_trench_gate_ixtq182n055t_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 55V 182A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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Technische Details IXTQ182N055T IXYS

Description: MOSFET N-CH 55V 182A TO3P, Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-3P, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 360W (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 182A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.

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IXTQ182N055T IXTQ182N055T Hersteller : IXYS media-3321532.pdf MOSFET 182 Amps 55V 4.4 Rds
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