Weitere Produktangebote IXTQ26N50P nach Preis ab 7.96 EUR bis 15.16 EUR
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IXTQ26N50P | IXYS |
 MOSFETs 26.0 Amps 500 V 0.23 Ohm Rds |
auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ26N50P | IXYS |
Description: MOSFET N-CH 500V 26A TO3P Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3P Vgs(th) (Max) @ Id: 5.5V @ 250µA Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel |
auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTQ26N50P |
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Hersteller: IXYS
MOSFETs 26.0 Amps 500 V 0.23 Ohm Rds
MOSFETs 26.0 Amps 500 V 0.23 Ohm Rds
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.82 EUR |
| 10+ | 8.27 EUR |
| 120+ | 7.96 EUR |
| IXTQ26N50P |
|
Hersteller: IXYS
Description: MOSFET N-CH 500V 26A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 500V 26A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.16 EUR |
| 30+ | 8.84 EUR |