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IXTQ36N50P IXYS


IXTH(Q,T,V)36N50P_S.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+13.92 EUR
30+11.88 EUR
Mindestbestellmenge: 7 Stücke
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Technische Details IXTQ36N50P IXYS

Description: MOSFET N-CH 500V 36A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V.

Weitere Produktangebote IXTQ36N50P nach Preis ab 13.35 EUR bis 27.89 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IXTQ36N50P IXTQ36N50P Ixys Corporation telfusediscretemosfetsnchannelstandardixt36n50pdatasheet.pdf Trans MOSFET N-CH 500V 36A 3-Pin(3+Tab) TO-3P
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
8+24.09 EUR
10+20.82 EUR
Mindestbestellmenge: 8 Stücke
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IXTQ36N50P IXTQ36N50P IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Standard_IXT_36N50P_Datasheet.PDF MOSFETs 36.0 Amps 500 V 0.17 Ohm Rds
auf Bestellung 178 Stücke:
Lieferzeit 10-14 Tag (e)
1+27.44 EUR
10+16.73 EUR
120+15.87 EUR
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IXTQ36N50P IXTQ36N50P IXYS media?resourcetype=datasheets&itemid=3C86AFF5-0579-4021-B7CC-FF31EC4A602E&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-36N50P-Datasheet.PDF Description: MOSFET N-CH 500V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
auf Bestellung 984 Stücke:
Lieferzeit 10-14 Tag (e)
1+27.89 EUR
30+17.01 EUR
60+15.71 EUR
120+14.63 EUR
510+13.35 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ36N50P telfusediscretemosfetsnchannelstandardixt36n50pdatasheet.pdf
Hersteller: Ixys Corporation
Trans MOSFET N-CH 500V 36A 3-Pin(3+Tab) TO-3P
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
8+24.09 EUR
10+20.82 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ36N50P Littelfuse_Discrete_MOSFETs_N_Channel_Standard_IXT_36N50P_Datasheet.PDF
Hersteller: IXYS
MOSFETs 36.0 Amps 500 V 0.17 Ohm Rds
auf Bestellung 178 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+27.44 EUR
10+16.73 EUR
120+15.87 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ36N50P media?resourcetype=datasheets&itemid=3C86AFF5-0579-4021-B7CC-FF31EC4A602E&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-36N50P-Datasheet.PDF
Hersteller: IXYS
Description: MOSFET N-CH 500V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
auf Bestellung 984 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+27.89 EUR
30+17.01 EUR
60+15.71 EUR
120+14.63 EUR
510+13.35 EUR
Im Einkaufswagen  Stück im Wert von  UAH