
IXTQ36N50P IXYS

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
6+ | 12.3 EUR |
7+ | 10.38 EUR |
10+ | 9.98 EUR |
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Technische Details IXTQ36N50P IXYS
Description: MOSFET N-CH 500V 36A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V.
Weitere Produktangebote IXTQ36N50P nach Preis ab 9.98 EUR bis 19.55 EUR
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IXTQ36N50P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 36A Power dissipation: 540W Case: TO3P On-state resistance: 0.17Ω Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 276 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ36N50P | Hersteller : IXYS |
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auf Bestellung 210 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ36N50P | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V |
auf Bestellung 195 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ36N50P | Hersteller : Ixys Corporation |
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auf Bestellung 276 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTQ36N50P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTQ36N50P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |