Produktrezensionen
Produktbewertung abgeben
Technische Details IXTT140N075L2HV IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO268HV; 200ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 75V, Drain current: 140A, Power dissipation: 540W, Case: TO268HV, On-state resistance: 11mΩ, Mounting: SMD, Gate charge: 275nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: linear power mosfet, Reverse recovery time: 200ns.
Weitere Produktangebote IXTT140N075L2HV
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXTT140N075L2HV | IXYS |
 MOSFETs TO268 N-CH 75V 140A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXTT140N075L2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO268HV; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 140A Power dissipation: 540W Case: TO268HV On-state resistance: 11mΩ Mounting: SMD Gate charge: 275nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTT140N075L2HV |
|
Hersteller: IXYS
MOSFETs TO268 N-CH 75V 140A
MOSFETs TO268 N-CH 75V 140A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTT140N075L2HV |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO268HV; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 200ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO268HV; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH