| Anzahl | Privatkunde |
|---|---|
| 1+ | 29.46 EUR |
| 10+ | 29.45 EUR |
| 30+ | 24.42 EUR |
| 60+ | 23.5 EUR |
| 120+ | 20.88 EUR |
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Technische Details IXTT16N20D2 IXYS
Description: MOSFET N-CH 200V 16A TO268, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 5 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Part Status: Active, Supplier Device Package: TO-268AA, Power Dissipation (Max): 695W (Tc), Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 0V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), FET Type: N-Channel, Depletion Mode, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.
Weitere Produktangebote IXTT16N20D2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IXTT16N20D2 |
 MOSFET N-CH 200V 16A TO-268 Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
 |
IXTT16N20D2 | Littelfuse Inc. |
Description: MOSFET N-CH 200V 16A TO268 Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 5 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: TO-268AA Power Dissipation (Max): 695W (Tc) Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 0V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel, Depletion Mode Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTT16N20D2 |
|
MOSFET N-CH 200V 16A TO-268 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTT16N20D2 |
|
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 200V 16A TO268
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-268AA
Power Dissipation (Max): 695W (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 0V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel, Depletion Mode
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Description: MOSFET N-CH 200V 16A TO268
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-268AA
Power Dissipation (Max): 695W (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 0V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel, Depletion Mode
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH