| Anzahl | Preis |
|---|---|
| 1+ | 24.76 EUR |
| 10+ | 24.75 EUR |
| 30+ | 20.52 EUR |
| 60+ | 19.75 EUR |
| 120+ | 17.55 EUR |
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Technische Details IXTT16N20D2 IXYS
Description: MOSFET N-CH 200V 16A TO268, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 5 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Part Status: Active, Supplier Device Package: TO-268AA, Power Dissipation (Max): 695W (Tc), Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 0V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), FET Type: N-Channel, Depletion Mode, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.
Weitere Produktangebote IXTT16N20D2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IXTT16N20D2 |
 MOSFET N-CH 200V 16A TO-268 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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IXTT16N20D2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 200V 16A TO268 Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 5 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: TO-268AA Power Dissipation (Max): 695W (Tc) Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 0V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel, Depletion Mode Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube |
Produkt ist nicht verfügbar |