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Technische Details IXTT1N250HV Littelfuse
Description: MOSFET N-CH 2500V 1.5A TO268, Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Drain to Source Voltage (Vdss): 2500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-268AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.
Weitere Produktangebote IXTT1N250HV nach Preis ab 56.51 EUR bis 107.41 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXTT1N250HV | Littelfuse |
 Trans MOSFET N-CH 2.5KV 1.5A 3-Pin(2+Tab) D3PAK-HV |
auf Bestellung 210 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTT1N250HV | IXYS |
Description: MOSFET N-CH 2500V 1.5A TO268 Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 2500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-268AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube |
auf Bestellung 1197 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTT1N250HV | IXYS |
MOSFETs DiscMosfet NCh Std-VeryHiVolt TO-268AA |
auf Bestellung 304 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTT1N250HV | IXYS RF |
Description: IXYS RF - IXTT1N250HV - MOSFET, N-CH, 2.5KV, 1.5A, TO-268 tariffCode: 0 Transistormontage: Surface Mount euEccn: NLR Drain-Source-Spannung Vds: 2.5kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 1.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 250W Bauform - Transistor: TO-268 (D3PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: N Channel Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 40ohm directShipCharge: 25 |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXTT1N250HV |
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Hersteller: Littelfuse
Trans MOSFET N-CH 2.5KV 1.5A 3-Pin(2+Tab) D3PAK-HV
Trans MOSFET N-CH 2.5KV 1.5A 3-Pin(2+Tab) D3PAK-HV
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 56.51 EUR |
| IXTT1N250HV |
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Hersteller: IXYS
Description: MOSFET N-CH 2500V 1.5A TO268
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 2500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Description: MOSFET N-CH 2500V 1.5A TO268
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 2500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
auf Bestellung 1197 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 79.02 EUR |
| 10+ | 59.01 EUR |
| 100+ | 57.85 EUR |
| IXTT1N250HV |
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Hersteller: IXYS
MOSFETs DiscMosfet NCh Std-VeryHiVolt TO-268AA
MOSFETs DiscMosfet NCh Std-VeryHiVolt TO-268AA
auf Bestellung 304 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 95.68 EUR |
| 10+ | 77.35 EUR |
| IXTT1N250HV |
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Hersteller: IXYS RF
Description: IXYS RF - IXTT1N250HV - MOSFET, N-CH, 2.5KV, 1.5A, TO-268
tariffCode: 0
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 2.5kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 1.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 250W
Bauform - Transistor: TO-268 (D3PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: N Channel
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 40ohm
directShipCharge: 25
Description: IXYS RF - IXTT1N250HV - MOSFET, N-CH, 2.5KV, 1.5A, TO-268
tariffCode: 0
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 2.5kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 1.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 250W
Bauform - Transistor: TO-268 (D3PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: N Channel
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 40ohm
directShipCharge: 25
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 107.41 EUR |
| 5+ | 87.2 EUR |
| 10+ | 68.92 EUR |