Technische Details IXTT34N65X2HV Littelfuse
Description: MOSFET N-CH 650V 34A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-268HV (IXTT), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V.
Weitere Produktangebote IXTT34N65X2HV
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| IXTT34N65X2HV | Hersteller : IXYS |
 IXTT34N65X2HV SMD N channel transistors |
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IXTT34N65X2HV | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 650V 34A TO268HV Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-268HV (IXTT) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTT34N65X2HV | Hersteller : IXYS |
MOSFETs TO268 650V 34A N-CH X4CLASS |
Produkt ist nicht verfügbar |